IRF1018ESTRLPBF
| Part No | IRF1018ESTRLPBF |
|---|---|
| Manufacturer | Infineon |
| Description | MOSFET N-CH 60V 79A D2PAK |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Availability:
19025
Pricing
| Quantity | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.92 | |
| 10 | 1.8816 | |
| 100 | 1.824 | |
| 1000 | 1.7664 | |
| 10000 | 1.6896 |
| Products Specifications | |
|---|---|
| RoHS | Compliant |
| Mount | Surface Mount |
| Width | 9.65 mm |
| Height | 4.826 mm |
| Length | 10.668 mm |
| Fall Time | 46 ns |
| Lead Free | Lead Free |
| Rise Time | 35 ns |
| REACH SVHC | No SVHC |
| Rds On Max | 8.4 mΩ |
| Resistance | 8.4 MΩ |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Nominal Vgs | 4 V |
| Case/Package | D2PAK |
| Recovery Time | 39 ns |
| Number of Pins | 3 |
| Lifecycle Status | Obsolete (Last Updated: 2 years ago) |
| Package Quantity | 800 |
| Input Capacitance | 2.29 nF |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Turn-On Delay Time | 13 ns |
| On-State Resistance | 8.4 mΩ |
| Radiation Hardening | No |
| Turn-Off Delay Time | 55 ns |
| Element Configuration | Single |
| Max Power Dissipation | 110 W |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 7.1 mΩ |
| Gate to Source Voltage (Vgs) | 20 V |
| Continuous Drain Current (ID) | 79 A |
| Max Junction Temperature (Tj) | 175 °C |
| Drain to Source Voltage (Vdss) | 60 V |
| Drain to Source Breakdown Voltage | 60 V |
